NTB5405N, NVB5405N
TYPICAL PERFORMANCE CURVES
200
175
150
V GS = 6 V to 10 V
T J = 25 ° C
5.5 V
5V
125
100
V DS ≥ 10 V
125
100
75
4.5 V
75
50
50
25
0
0
1
2
3
4
5
6
7
8
4V
3.5 V
9 10
25
0
0
T J = 125 ° C
T J = 25 ° C
1 2 3
T J = ? 55 ° C
4 5
6 7
8
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.01
0.009
0.008
0.007
I D = 40 A
T J = 25 ° C
0.01
0.009
0.008
0.007
T J = 25 ° C
V GS = 5 V
0.006
0.006
0.005
0.004
0.005
0.004
0.003
V GS = 10 V
0.003
3
4
5
6
7
8
9
10
0.002
15
25
35
45
55
65
75
85
95
105 115
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
2
1.8
1.6
I D = 40 A
V GS = 10 V
100000
10000
V GS = 0 V
T J = 175 ° C
1.4
1000
1.2
1
0.8
100
T J = 100 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
175
10
10
15
20
25
30
35
40
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
相关PDF资料
NTB5411NT4G MOSFET N-CH 60V 80A D2PAK
NTB5412NT4G MOSFET N-CH 60V 60A D2PAK
NTB5426NT4G MOSFET N-CH 60V 120A D2PAK
NTB5605T4G MOSFET P-CH 60V 18.5A D2PAK
NTB6410ANG MOSFET N-CH 100V 76A D2PAK
NTB6411ANG MOSFET N-CH 100V 72A D2PAK
NTB6413ANG MOSFET N-CH 100V 42A D2PAK
NTB85N03T4G MOSFET N-CH 28V 85A D2PAK
相关代理商/技术参数
NTB5405NT4G 功能描述:MOSFET NFET 40V 116A PB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5411N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5411NT4G 功能描述:MOSFET NFET D2PAK 60V 75A 12.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5412N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5412NT4G 功能描述:MOSFET NFET D2PAK 60V 60A 14.0mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5426N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5426NT4G 功能描述:MOSFET 60V, 4.5mOhms N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605P 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube